MEMS High Stability Pressure Chip

PSPR-HS

The PSPR-HS series high stability pressure sensor chip is a MEMS chip based on the piezoresistive effect. Relying on advanced MEMS technology
Integrated pressure sensor and temperature sensor, with long-term stability<0.05% FS/year. Chip PAD placed on the same side, convenient and fast
Perform wire bonding process quickly. This series covers a pressure range of 40kPa~40MPa, suitable for absolute pressure/differential pressure/gauge pressure measurement
Used in automotive, industrial and other fields.
performance parameter Advantages and Characteristics application area

performance parameter



ModelPressure RangeMinimumTypical valuesMaximumSizeFull-scale temperature coefficient

PSPR -040k-A/D/G-HS-Gxx

40 kPa40801202.1*2.1(-0.29~-0.25)
PSPR -100k-A/D/G-HS-Gxx100kPa601001402.1*2.1(-0.29~-0.25)
PSPR -200k-A/D/G-HS-Gxx200kPa601001402.1*2.1(-0.29~-0.25)

PSPR -350k-A/D/G-HS-Gxx

350kPa601001402.1*2.1(-0.29~-0.25)

PSPR -700k-A/D/G-HS-Gxx

700kPa601001402.1*2.1(-0.29~-0.25)

PSPR -01M0-A/D/G-HS-Gxx

1MPa601001402.1*2.1(-0.29~-0.25)

PSPR -01M6-A/D/G-HS-Gxx

1.6MPa601001402.1*2.1(-0.29~-0.25)

PSPR -03M5-A/D/G-HS-Gx

3.5MPa601001402.1*2.1(-0.29~-0.25)

PSPR -07M0-A-HS-Gxx

7MPa601001402.1*2.1(-0.29~-0.25)

PSPR -10M0-A-HS-Gxx

10MPa601001402.1*2.1(-0.29~-0.25)
PSPR -40M0-A-HS-Gxx40 MPa601001402.1*2.1(-0.29~-0.25)



ModelZero bias temperature coefficientZero biasNonlinear pressureTemperature HysteresisPressure hysteresisLong term stability

PSPR -040k-A/D/G-HS-Gxx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05
PSPR -100k-A/D/G-HS-Gxx(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05
PSPR -200k-A/D/G-HS-Gxx(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05

PSPR -350k-A/D/G-HS-Gxx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05

PSPR -700k-A/D/G-HS-Gxx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05

PSPR -01M0-A/D/G-HS-Gxx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05

PSPR -01M6-A/D/G-HS-Gxx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05

PSPR -03M5-A/D/G-HS-Gx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05

PSPR -07M0-A-HS-Gxx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05

PSPR -10M0-A-HS-Gxx

(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05
PSPR -40M0-A-HS-Gxx(-0.09~-0.05)(-25-25)<0.15<0.1<0.050.05



Advantages and Characteristics

  • Built in temperature sensor
    Built in temperature sensor Built in temperature sensor
  • High precision pressure monitoring
    High precision pressure monitoring High precision pressure monitoring
  • property rights
    property rights property rights
  • Design of sensors with independent intellectual
    Design of sensors with independent intellectual Design of sensors with independent intellectual
  • Miniaturization MEMS technology
    Miniaturization MEMS technology Miniaturization MEMS technology

application area

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